| PART |
Description |
Maker |
| BLM7G1822S-40AB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM8G0710S-45AB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G1822S-40PB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G1822S-20PB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| MW5IC970GNBR1 |
RF LDMOS Wideband 2-Stage Power Amplifiers
|
Freescale Semiconductor...
|
| Q68000-A8787 CGY62 |
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 input / output) 200 MHz - 1800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 input / output)
From old datasheet system
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 ヘ input / output)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| PTMC210404MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W, 28 V, 1805 ?2200 MHz
|
Cree, Inc
|
| CGY181 |
PCN/PCS 2 stage Power Amplifier MMIC
|
Infineon
|
| BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
